Characterisation of SiOxCyHz thin films deposited by low-temperature PECVD

被引：35
|
作者：
Zanini, Stefano
Riccardi, Claudia
Orlandi, Marco
Grimoldi, Elisa
机构：
[1] Univ Studi Milano Bicocca, Dipartimento Fis Occhialini, I-20126 Milan, Italy
[2] Univ Studi Milano Bicocca, Dipartimento Sci Ambiente Territorio, I-20126 Milan, Italy
来源：
VACUUM | 2007年 / 82卷 / 02期
关键词：
PECVD; HMDSO; gas barrier; atomic force microscopy;
D O I：
10.1016/j.vacuum.2007.07.001
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
SiOxCyHz thin films were deposited from hexamethyldisiloxane (HMDSO)/O-2 mixtures in a parallel plate, capacitively coupled, RF plasma reactor. Polyethylene terephthalate (PET), Si(100) wafers and KBr tablets were chosen as substrates. Effect of HMDSO/O-2 ratio, total treatment pressure and power input on the properties of the deposited films were investigated. The structure and bondings were studied by means of Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. Wettability characteristics of the deposited thin films were investigated by means of water droplet contact angle measurements. Surface morphology was investigated with atomic force microscopy. Barrier properties of the SiOxCyHz thin films were investigated by measuring the water vapour transmission rate of the coated PET substrates. Correlations between the characteristics of the deposited film and their barrier properties were discussed. (C) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码：290 / 293
页数：4
相关论文
共 50 条
  • [31] Assessment of spectroscopic methods for the characterisation of DLC films deposited by PECVD
    Poukhovoi, A.
    Schipporeit, S.
    Becker, H. -W.
    Calliari, L.
    Buck, V.
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2012, 14 (3-4): : 383 - 392
  • [32] Electrical properties of HfOxNy thin films deposited by PECVD
    Park, J.-H.
    Hyun, J.-S.
    Kang, B.-C.
    Boo, J.-H.
    SURFACE & COATINGS TECHNOLOGY, 2007, 201 (9-11): : 5336 - 5339
  • [33] Mesostructured thin films deposited by PECVD from TMGe
    Kazimierski, P
    THIN SOLID FILMS, 2006, 495 (1-2) : 144 - 148
  • [34] REACTION PATHWAYS AND SOURCES OF OH GROUPS IN LOW-TEMPERATURE REMOTE PECVD SILICON DIOXIDE THIN-FILMS
    THEIL, JA
    TSU, DV
    LUCOVSKY, G
    JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (03) : 209 - 217
  • [35] LOW-TEMPERATURE DISINTEGRATION OF THIN SOLID FILMS
    MAZUR, VA
    GOLDINER, MG
    PHYSICS LETTERS A, 1989, 137 (1-2) : 69 - 74
  • [36] LOW-TEMPERATURE PROPERTIES OF THIN-FILMS
    TOSIC, BS
    SETRAJCIC, JP
    MIRJANIC, DL
    BUNDALO, ZV
    PHYSICA A-STATISTICAL MECHANICS AND ITS APPLICATIONS, 1992, 184 (3-4) : 354 - 366
  • [37] Low-temperature germanium thin films on silicon
    Sorianello, Vito
    Colace, Lorenzo
    Armani, Nicola
    Rossi, Francesca
    Ferrari, Claudio
    Lazzarini, Laura
    Assanto, Gaetano
    OPTICAL MATERIALS EXPRESS, 2011, 1 (05): : 856 - 865
  • [38] Silicon dioxide deposited by ECR-PECVD for low-temperature Si devices processing
    Pecora, A
    Maiolo, L
    Bonfiglietti, A
    Cuscunà, M
    Mecarini, F
    Mariucci, L
    Fortunato, G
    Young, ND
    MICROELECTRONICS RELIABILITY, 2005, 45 (5-6) : 879 - 882
  • [39] Low-temperature growth of γ phase in thermally deposited In2Se3 thin films
    Panda, Rozalin
    Naik, R.
    Mishra, N. C.
    PHASE TRANSITIONS, 2018, 91 (08) : 862 - 871
  • [40] Stress in low-temperature plasma enhanced chemical vapour deposited silicon nitride thin films
    Martyniuk, M
    Antoszewski, J
    Musca, CA
    Dell, JM
    Faraone, L
    SMART MATERIALS AND STRUCTURES, 2006, 15 (01) : S29 - S38
12345