Temperature stable high K microwave dielectric ceramics of Bi3NbO7 doped by V2O5

被引：4
|
作者：
Pang, Li-Xia [1 ]
Liu, Wei-Guo [1 ]
Zhou, Di [2 ,3 ]
机构：
[1] Xian Technol Univ, Lab Thin Film Tech & Opt Test, Xian 710032, Shaanxi, Peoples R China
[2] Xi An Jiao Tong Univ, Key Lab Minist Educ, Elect Mat Res Lab, Xian 710049, Shaanxi, Peoples R China
[3] Xi An Jiao Tong Univ, Int Ctr Dielect Res, Xian 710049, Shaanxi, Peoples R China
来源：
CERAMICS INTERNATIONAL | 2015年 / 41卷 / 03期
关键词：
Sintering; Dielectric properties; Capacitors; OXIDES;
D O I：
10.1016/j.ceramint.2014.12.024
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Low firing microwave dielectric ceramics Bi-3(Nb1-xVx)O-7 (x=0.0, 0.1, 0.2, 0.3, and 0.5) were prepared by the solid state reaction method. Sintering behavior, crystalline structure, microstructure, and microwave dielectric properties were studied. Temperature stable low-firing microwave dielectric ceramics with high permittivity were obtained in the Bi-3(Nb1-x,V-x)O-7 system when x=0.1 and 0.2. The Bi-3(Nb0.9V0.1)O-7 and Bi-3(Nb0.8V0.2)O-7 ceramics sintered at 870 degrees C for 2 h were found to possess high permittivity of 80 and 76, Qf (quality factor) values of 615 and 460 GHz, and TCF (temperature coefficient of frequency) values of -22 and+3.3 ppm/degrees C, respectively. (C) 2014 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
引用
收藏
页码：5182 / 5185
页数：4
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