Low-temperature firing and microwave dielectric properties of MgTiO3 ceramics with Bi2O3-V2O5

被引：43
|
作者：
Zhang, QL [1 ]
Yang, H [1 ]
Tong, HX [1 ]
机构：
[1] Zhejiang Univ, Coll Mat Sci & Chem Engn, Hangzhou 310027, Peoples R China
来源：
MATERIALS LETTERS | 2006年 / 60卷 / 9-10期
关键词：
dielectric properties; microwave ceramic; MgTiO3; ceramic; low-temperature firing; Bi2O3;
D O I：
10.1016/j.matlet.2005.10.105
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effects of Bi2O3-V2O5 additive on the microstructures, the phase formation and the microwave dielectric properties of MgTiO3 Ceramics were investigated. The Bi2O3-V2O5 addition lowered the sintering temperature of MgTiO3 ceramics effectively from 1400 to 875 degrees C due to the liquid-phase effect. The microwave dielectric properties were found to strongly correlate with the amount of Bi2O3-V2O5 addition. The saturated dielectric constant decreased and the maximum Qf values increased with the increasing V2O5 content, which is attributed to the variation of the second phase including Bi2T2O7, Bi4V1.5Ti0.5O10.85 and BiVO4. At 875 degrees C, MgTiO3 ceramics with 5.0 mol% Bi2O3-7 mol% V2O5 gave excellent microwave dielectric properties: epsilon(r)=20.6, Qf=10420 GHz (6.3 GHz). (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：1188 / 1191
页数：4
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