Applying a 3300V SiC Half-bridge to an MMC Based HVDC System

被引：0
|
作者：
Hohmann, Fabian [1 ]
Bakran, Mark-M [1 ]
机构：
[1] Univ Bayreuth, D-95447 Bayreuth, Germany
来源：
2019 21ST EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE '19 ECCE EUROPE) | 2019年
关键词：
Efficiency; Multilevel converters; Silicon Carbide (SiC); High voltage power converters;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
A 3.3 kV silicon carbide (SiC) MOSFET is analyzed for the use in a modular multilevel converter (MMC). A laboratory-setup of a submodule is built to characterize the switching behavior. The total losses are calculated for the MMC operation. A comparison to a silicon (Si) based IGBT model is made based on losses and the necessary semiconductor area.
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页数：9
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