Applying a 3300V SiC Half-bridge to an MMC Based HVDC System

被引:0
|
作者
Hohmann, Fabian [1 ]
Bakran, Mark-M [1 ]
机构
[1] Univ Bayreuth, D-95447 Bayreuth, Germany
关键词
Efficiency; Multilevel converters; Silicon Carbide (SiC); High voltage power converters;
D O I
暂无
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
A 3.3 kV silicon carbide (SiC) MOSFET is analyzed for the use in a modular multilevel converter (MMC). A laboratory-setup of a submodule is built to characterize the switching behavior. The total losses are calculated for the MMC operation. A comparison to a silicon (Si) based IGBT model is made based on losses and the necessary semiconductor area.
引用
收藏
页数:9
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