Irradiation induced growth of CoSi2 precipitates in Si at 650 degrees C: An in situ study

被引：4
|
作者：
Palard, M [1 ]
Ruault, MO [1 ]
Kaitasov, O [1 ]
Bernas, H [1 ]
Heinig, KH [1 ]
机构：
[1] ROSSENDORF INC,FORSCHUNGSZENTRUM ROSSENDORF EV,D-01314 DRESDEN,GERMANY
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1996年 / 120卷 / 1-4期
关键词：
D O I：
10.1016/S0168-583X(96)00511-3
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Crystalline Si samples were implanted at 350 degrees C with 50 keV Co+ ions to a fluence of 10(15) Co cm(-2). Small CoSi2 precipitates were formed. We studied the precipitate growth, via in situ transmission electron microscopy, under irradiation with 100 keV Si ions at 650 degrees C. We deduce the precipitate growth processes involved. Irradiation-induced (or enhanced) Ostwald ripening is the main growth mechanism. We also find an instability of the B-type precipitates, which leads to their transformation into A-type precipitates above a critical size. These preliminary results show that direct comparisons with kinetic Monte Carlo modelling of the precipitate growth is at hand.
引用
收藏
页码：212 / 215
页数：4
相关论文
共 50 条
  • [41] EPITAXIAL-GROWTH OF COSI2 ON SI(111) STUDIED BY PHOTOEMISSION
    HADERBACHE, L
    WETZEL, P
    PIRRI, C
    PERUCHETTI, JC
    BOLMONT, D
    GEWINNER, G
    REVUE DE PHYSIQUE APPLIQUEE, 1990, 25 (09): : 869 - 885
  • [42] GROWTH OF EPITAXIAL ULTRATHIN CONTINUOUS COSI2 LAYERS ON SI(111)
    HENZ, J
    VONKANEL, H
    OSPELT, M
    WACHTER, P
    SURFACE SCIENCE, 1987, 189 : 1055 - 1061
  • [43] GROWTH AND ELECTRONIC TRANSPORT IN THIN EPITAXIAL COSI2 - SI HETEROSTRUCTURES
    DAVITAYA, FA
    BADOZ, PA
    BRIGGS, A
    DANTERROCHES, C
    DUBOZ, JY
    FISHMAN, G
    GLASTRE, G
    PFISTER, JC
    PUISSANT, C
    ROSENCHER, E
    VINCENT, G
    HETEROSTRUCTURES ON SILICON : ONE STEP FURTHER WITH SILICON, 1989, 160 : 253 - 259
  • [44] Pulsed laser deposition of Co and growth of CoSi2 on Si(111)
    M. Löffler
    J. Cordón
    M. Weinelt
    J.E. Ortega
    T. Fauster
    Applied Physics A, 2005, 81 : 1651 - 1655
  • [45] Epitaxial growth of CoSi2 on hydrogen-terminated Si(001)
    Ishida, K
    Miura, Y
    Hirose, K
    Harada, S
    Narusawa, T
    APPLIED PHYSICS LETTERS, 2003, 82 (12) : 1842 - 1844
  • [46] ALLOTAXIAL GROWTH OF SINGLE-CRYSTAL SI/COSI2/SI(100) HETEROSTRUCTURES
    BAY, HL
    MANTL, S
    MICHEL, I
    APPLIED SURFACE SCIENCE, 1993, 65-6 : 697 - 703
  • [47] IN-SITU STUDY OF EPITAXIAL COSI2/SI(111) BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY
    SIRRINGHAUS, H
    LEE, EY
    VONKANEL, H
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (04): : 2629 - 2633
  • [48] In-situ TEM observation of repeating events of nucleation in epitaxial growth of nano COSi2 in nanowires of Si
    Chou, Yi-Chia
    Wu, Wen-Wei
    Cheng, Shao-Liang
    Yoo, Bong-Young
    Myung, Nosang
    Chen, Lih J.
    Tu, K. N.
    NANO LETTERS, 2008, 8 (08) : 2194 - 2199
  • [49] GROWTH OF EPITAXIAL COSI2 FILM ON SI(100) SUBSTRATE-INDUCED BY AN INTERFACIAL TI LAYER
    LIU, P
    LI, BZ
    ZHOU, ZY
    LIN, CL
    ZOU, SC
    MATERIALS LETTERS, 1993, 17 (06) : 383 - 387
  • [50] Kinetics during endotaxial growth of CoSi2 nanowires and islands on Si(001)
    Ong, Bin Leong
    Tok, Eng Soon
    APPLIED SURFACE SCIENCE, 2019, 466 : 583 - 591
12345