Irradiation induced growth of CoSi2 precipitates in Si at 650 degrees C: An in situ study

被引：4
|
作者：
Palard, M [1 ]
Ruault, MO [1 ]
Kaitasov, O [1 ]
Bernas, H [1 ]
Heinig, KH [1 ]
机构：
[1] ROSSENDORF INC,FORSCHUNGSZENTRUM ROSSENDORF EV,D-01314 DRESDEN,GERMANY
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1996年 / 120卷 / 1-4期
关键词：
D O I：
10.1016/S0168-583X(96)00511-3
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Crystalline Si samples were implanted at 350 degrees C with 50 keV Co+ ions to a fluence of 10(15) Co cm(-2). Small CoSi2 precipitates were formed. We studied the precipitate growth, via in situ transmission electron microscopy, under irradiation with 100 keV Si ions at 650 degrees C. We deduce the precipitate growth processes involved. Irradiation-induced (or enhanced) Ostwald ripening is the main growth mechanism. We also find an instability of the B-type precipitates, which leads to their transformation into A-type precipitates above a critical size. These preliminary results show that direct comparisons with kinetic Monte Carlo modelling of the precipitate growth is at hand.
引用
收藏
页码：212 / 215
页数：4
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