Measurement of minority carrier lifetime in infrared photovoltaic detectors using parallel circuit method

被引：1

作者：

Cui, Haoyang ^{[1
]}

Wang, Chaoqun ^{[1
]}

Wang, Jialin ^{[1
]}

Liu, Can ^{[1
]}

Pi, Kaiyun ^{[1
]}

Li, Xiang ^{[1
]}

Tang, Zhong ^{[1
]}

机构：

[1] Shanghai Univ Elect Power, Sch Elect & Informat Engn, Shanghai 200090, Peoples R China

来源：

OPTICAL AND QUANTUM ELECTRONICS | 2015年 / 47卷 / 06期

基金：

中国国家自然科学基金;

关键词：

Minority carrier lifetime; RC time constant; Parallel resistance; Composition; Pixel dimension; HGCDTE; TRANSIENTS;

D O I：

10.1007/s11082-014-0073-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An experimental method for extracting the minority carrier lifetime of a pn-juntion-type HgCdTe infrared photodetector by transient photovoltage technique is reported. The photovoltaic response of the detector is induced by a picosecond pulsed infrared laser irradiation. A small resistance is paralleled with the photodiode to minimize the influence of the junction RC constant on the photovoltaic response curve. By fitting the exponential decay phase, the time constant has been obtained which is regarded as the minority carrier lifetime of the photodiode. The carrier lifetime extracted from the experiment is in the range of 0.7-110 ns at 77 K. It is found that the minority carrier lifetime shows an increasing trend with in the increased Cd composition and pixel dimension.

引用

页码：1367 / 1372

页数：6

共 50 条

[21] MEASUREMENT OF MINORITY-CARRIER LIFETIME PROFILES IN SILICON
SCHWAB, G
BERNT, H
REICHL, H
SOLID-STATE ELECTRONICS, 1977, 20 (02) : 91 - &
[22] CONTACTLESS MEASUREMENT OF MINORITY-CARRIER LIFETIME IN SILICON
WHITE, JC
UNTER, TF
SMITH, JG
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (09) : 1217 - 1218
[23] Measurement of minority carrier lifetime in epitaxial silicon layers
Kitamura, T
Tamura, F
Hara, T
Hourai, M
Tsuya, H
PROCEEDINGS OF THE FOURTH INTERNATIONAL SYMPOSIUM ON HIGH PURITY SILICON, 1996, 96 (13): : 533 - 543
[24] Minority carrier lifetime measurement in epitaxial silicon layers
Hara, T
Tamura, F
Kitamura, T
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (04) : L54 - L57
[25] PHOTOVOLTAIC SHORT-CIRCUIT MINORITY-CARRIER INJECTION
BERRY, WB
APPLIED PHYSICS LETTERS, 1974, 25 (04) : 195 - 196
[26] Identification of Cr in p-type silicon using the minority carrier lifetime measurement by the surface photovoltage method
Mishra, K
APPLIED PHYSICS LETTERS, 1996, 68 (23) : 3281 - 3283
[27] The influence of the character of laser source on the minority carrier lifetime in silicon lifetime measurement
Chen Fengxiang
Wang Lisheng
PROCEEDINGS OF ISES SOLAR WORLD CONGRESS 2007: SOLAR ENERGY AND HUMAN SETTLEMENT, VOLS I-V, 2007, : 1152 - 1155
[28] Minority Carrier Lifetime Measurements by Photoinduced Carrier Microwave Absorption Method
Sameshima, Toshiyuki
Nagao, Tomokazu
Yoshidomi, Shinya
Kogure, Kazuya
Hasumi, Masahiko
JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (03)
[29] METHOD OF MINORITY-CARRIER LIFETIME DETERMINATION FOR A SEMICONDUCTOR
KAUROV, VV
PANTELEEV, VA
INDUSTRIAL LABORATORY, 1976, 42 (08): : 1280 - 1282
[30] MEASUREMENT OF MINORITY-CARRIER LIFETIME IN SILICON AT MICROWAVE FREQUENCIES USING MICROSTRIP TECHNIQUES
MAKIOS, V
THOMAS, RE
ELECTRONICS LETTERS, 1971, 7 (17) : 496 - &

← 1 2 3 4 5 →