Measurement of minority carrier lifetime in infrared photovoltaic detectors using parallel circuit method

被引：1

作者：

Cui, Haoyang ^{[1
]}

Wang, Chaoqun ^{[1
]}

Wang, Jialin ^{[1
]}

Liu, Can ^{[1
]}

Pi, Kaiyun ^{[1
]}

Li, Xiang ^{[1
]}

Tang, Zhong ^{[1
]}

机构：

[1] Shanghai Univ Elect Power, Sch Elect & Informat Engn, Shanghai 200090, Peoples R China

来源：

OPTICAL AND QUANTUM ELECTRONICS | 2015年 / 47卷 / 06期

基金：

中国国家自然科学基金;

关键词：

Minority carrier lifetime; RC time constant; Parallel resistance; Composition; Pixel dimension; HGCDTE; TRANSIENTS;

D O I：

10.1007/s11082-014-0073-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An experimental method for extracting the minority carrier lifetime of a pn-juntion-type HgCdTe infrared photodetector by transient photovoltage technique is reported. The photovoltaic response of the detector is induced by a picosecond pulsed infrared laser irradiation. A small resistance is paralleled with the photodiode to minimize the influence of the junction RC constant on the photovoltaic response curve. By fitting the exponential decay phase, the time constant has been obtained which is regarded as the minority carrier lifetime of the photodiode. The carrier lifetime extracted from the experiment is in the range of 0.7-110 ns at 77 K. It is found that the minority carrier lifetime shows an increasing trend with in the increased Cd composition and pixel dimension.

引用

页码：1367 / 1372

页数：6

共 50 条

[1] Measurement of minority carrier lifetime in infrared photovoltaic detectors using parallel circuit method
Haoyang Cui
Chaoqun Wang
Jialin Wang
Can Liu
Kaiyun Pi
Xiang Li
Zhong Tang
Optical and Quantum Electronics, 2015, 47 : 1367 - 1372
[2] Determination of minority carrier lifetime in mercury-cadmium telluride photovoltaic detectors using parallel resistance method
Cui, Haoyang
Wang, Jialin
Wang, Chaoqun
Liu, Can
Tang, Zhong
2014 14th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2014), 2014, : 35 - 36
[3] Methods for determining minority carrier lifetime in HgCdTe photovoltaic detectors
Cui, Haoyang
Li, Zhifeng
Ye, Zhenhua
Hu, Xiaoning
Lu, Wei
2009 34TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES, VOLS 1 AND 2, 2009, : 177 - +
[4] Experimental determination of minority carrier lifetime and recombination mechanisms in MCT photovoltaic detectors
Cui, Haoyang
Tang, Naiyun
Tang, Zhong
2012 12TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES (NUSOD), 2012, : 39 - 40
[5] Experimental Determination of Effective Minority Carrier Lifetime in HgCdTe Photovoltaic Detectors Using Optical and Electrical Methods
Cui, Haoyang
Wang, Jialin
Wang, Chaoqun
Liu, Can
Pi, Kaiyun
Li, Xiang
Xu, Yongpeng
Tang, Zhong
ADVANCES IN CONDENSED MATTER PHYSICS, 2015, 2015
[6] MEASUREMENT OF MINORITY CARRIER DIFFUSION LENGTH AND LIFETIME BY MEANS OF THE PHOTOVOLTAIC EFFECT
WALDNER, M
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1959, 47 (05): : 1004 - 1005
[7] Performance of InAs/GaSb superlattice infrared detectors and dependence on minority carrier lifetime
Bandara, Sumith
Maloney, Patrick
Baril, Neil
Pellegrino, Joseph
Tidrow, Meimei
INFRARED PHYSICS & TECHNOLOGY, 2011, 54 (03) : 263 - 266
[8] MEASUREMENT OF MINORITY CARRIER LIFETIME IN SIC BY A NOVEL ELECTROLUMINESCENT METHOD
HARMAN, GG
RAYBOLD, RL
JOURNAL OF APPLIED PHYSICS, 1961, 32 (06) : 1168 - &
[9] MEASUREMENT OF MINORITY CARRIER LIFETIME IN SILICON
WATTERS, RL
LUDWIG, GW
JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) : 489 - 496
[10] MEASUREMENT OF MINORITY CARRIER LIFETIME IN GERMANIUM
VALDES, LB
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1420 - 1423

← 1 2 3 4 5 →