Methods for determining minority carrier lifetime in HgCdTe photovoltaic detectors

被引：0
|
作者：
Cui, Haoyang [1 ]
Li, Zhifeng [2 ]
Ye, Zhenhua [2 ]
Hu, Xiaoning [2 ]
Lu, Wei [2 ]
机构：
[1] Shanghai Univ Elect Power, Shanghai 200090, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Tech Phys, Shanghai 200083, Peoples R China
来源：
2009 34TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES, VOLS 1 AND 2 | 2009年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Using three methods, i.e., modified photo-induced open-circuit voltage decay method (OCVD), small parallel resistance method and pulse recovery method, the minority carrier lifetime in the base region of Hgi(1-x)Cd(x)Te pn junction devices has been measured at liquid nitrogen temperature. The lifetime is in the range of 18 similar to 407 ns for x=0.231 similar to 0.4186, 1 similar to 100 ns for x=0.2234 similar to 0.305, and 4 similar to 20 ns for x=0.231 similar to 0.4186 for the modified photo-induced OCVD method, the small parallel resistance method and the pulse recovery method, respectively. The results indicate that the lifetime become longer with the increase of Cd composition.
引用
收藏
页码：177 / +
页数：2
相关论文
共 50 条
  • [1] Experimental Determination of Effective Minority Carrier Lifetime in HgCdTe Photovoltaic Detectors Using Optical and Electrical Methods
    Cui, Haoyang
    Wang, Jialin
    Wang, Chaoqun
    Liu, Can
    Pi, Kaiyun
    Li, Xiang
    Xu, Yongpeng
    Tang, Zhong
    [J]. ADVANCES IN CONDENSED MATTER PHYSICS, 2015, 2015
  • [2] Minority carrier lifetime in p-HgCdTe
    Kinch, MA
    Aqariden, F
    Chandra, D
    Liao, PK
    Schaake, HF
    Shih, HD
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 2005, 34 (06) : 880 - 884
  • [3] Effect of dislocations on minority carrier lifetime in HgCdTe
    Gopal, V
    Gupta, S
    [J]. JOURNAL OF APPLIED PHYSICS, 2004, 95 (05) : 2467 - 2472
  • [4] Minority carrier lifetime in p-HgCdTe
    M. A. Kinch
    F. Aqariden
    D. Chandra
    P-K Liao
    H. F. Schaake
    H. D. Shih
    [J]. Journal of Electronic Materials, 2005, 34 : 880 - 884
  • [5] Experimental determination of minority carrier lifetime and recombination mechanisms in MCT photovoltaic detectors
    Cui, Haoyang
    Tang, Naiyun
    Tang, Zhong
    [J]. 2012 12TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES (NUSOD), 2012, : 39 - 40
  • [6] Measurement of minority carrier lifetime in infrared photovoltaic detectors using parallel circuit method
    Haoyang Cui
    Chaoqun Wang
    Jialin Wang
    Can Liu
    Kaiyun Pi
    Xiang Li
    Zhong Tang
    [J]. Optical and Quantum Electronics, 2015, 47 : 1367 - 1372
  • [7] Measurement of minority carrier lifetime in infrared photovoltaic detectors using parallel circuit method
    Cui, Haoyang
    Wang, Chaoqun
    Wang, Jialin
    Liu, Can
    Pi, Kaiyun
    Li, Xiang
    Tang, Zhong
    [J]. OPTICAL AND QUANTUM ELECTRONICS, 2015, 47 (06) : 1367 - 1372
  • [8] Minority carrier lifetime in abrupt MBE grown HgCdTe heterostructures
    Sewell, R
    Dell, JM
    Musca, CA
    Faraone, L
    [J]. MATERIALS FOR INFRARED DETECTORS II, 2002, 4795 : 62 - 69
  • [9] MINORITY-CARRIER LIFETIME OF HGCDTE FROM PHOTOCONDUCTIVITY DECAY METHOD
    REICHMAN, J
    [J]. APPLIED PHYSICS LETTERS, 1991, 59 (10) : 1221 - 1223
  • [10] Determination of minority carrier lifetime in mercury-cadmium telluride photovoltaic detectors using parallel resistance method
    Cui, Haoyang
    Wang, Jialin
    Wang, Chaoqun
    Liu, Can
    Tang, Zhong
    [J]. 2014 14th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2014), 2014, : 35 - 36
12345