Yb:CaF2 grown by liquid phase epitaxy

被引:15
|
作者
Pena, Alexandra [1 ]
Camy, Patrice [1 ]
Benayad, Abdelmjid [1 ]
Doualan, Jean-Louis [1 ]
Maurel, Clement [1 ]
Olivier, Melinda [2 ]
Nazabal, Virginie [2 ]
Moncorge, Richard [1 ]
机构
[1] Univ Caen, Ctr Rech Ions Mat & Photon CIMAP, UMR CEA CNRS ENSICaen, F-14050 Caen, France
[2] Univ Rennes 1, UMR CNRS 6226, Equipe Verres & Ceram, F-35042 Rennes, France
关键词
CaF2; Crystal; Rare earth ions; Liquid phase epitaxy; PLANAR WAVE-GUIDES; YB3+-CAF2 LASER; CAF2; CRYSTAL;
D O I
10.1016/j.optmat.2011.04.025
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Ytterbium doped CaF2 crystalline layers have been grown for the first time from high temperature solutions at controlled atmosphere by using the liquid phase epitaxy technique. Doped layers having thicknesses between a few microns to a hundred of microns have been grown onto non-oriented and (1 1 1) oriented CaF2 substrates. The Yb3+:CaF2 layers show structural properties very close to the undoped substrate without any further thermal treatment. Registration of room temperature emission spectra and fluorescence lifetime measurements performed with epitaxial layers corresponding to different ytterbium concentrations show similar spectroscopic properties as in the bulk crystals. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:1616 / 1620
页数:5
相关论文
共 50 条
  • [41] Luminescent properties of LuAG:Yb and YAG:Yb single crystalline films grown by Liquid Phase Epitaxy method
    Zorenko, Yu
    Zorenko, T.
    Gorbenko, V.
    Voznyak, T.
    Popielarski, P.
    Batentschuk, M.
    Osvet, A.
    Brabec, Ch
    Kolobanov, V.
    Spasky, D.
    Fedorov, A.
    RADIATION MEASUREMENTS, 2016, 90 : 132 - 135
  • [42] Effect of heating rate on the responses of CaF2:Cu, CaF2:Tm, CaF2:Dy and CaF2:Mn
    Pradhan, AS
    SOLID STATE DOSIMETRY, PTS 1 AND 2, PROCEEDINGS, 2002, : 289 - 292
  • [43] Effect of heating rate on the responses of CaF2:Cu, CaF2:Tm, CaF2:Dy and CaF2:Mn
    Pradhan, AS
    RADIATION PROTECTION DOSIMETRY, 2002, 100 (1-4) : 289 - 292
  • [44] Epitaxy of CaF2/Si(111) and LiF/Ge(100)
    Himpsel, F.J.
    Hunan Shifan Daxue Ziran Kexue Xuebao/Natural Sciences Journal of Hunan Normal University, 1994, 17 (03):
  • [45] OPTIMIZATION OF GAAS EPITAXY ON CAF2/SI(111) SUBSTRATES
    LI, WD
    ANAN, T
    SCHOWALTER, LJ
    JOURNAL OF CRYSTAL GROWTH, 1994, 135 (1-2) : 78 - 84
  • [46] Type B epitaxy of Ge on CaF2(111) surface
    Chan, T. -L
    Gaire, C.
    Lu, T. -M.
    Wang, G. -C.
    Zhang, S. B.
    SURFACE SCIENCE, 2010, 604 (19-20) : 1645 - 1648
  • [47] High energy regenerative amplifier based on Yb:CaF2
    Sevillano, P.
    Brisset, J. G.
    Tropheme, B.
    Courjaud, A.
    SOLID STATE LASERS XXVI: TECHNOLOGY AND DEVICES, 2017, 10082
  • [48] Terawatt diode-pumped Yb: CaF2 laser
    Siebold, Mathias
    Hornung, Marco
    Boedefeld, Ragnar
    Podleska, Sebastian
    Klingebiel, Sandro
    Wandt, Christoph
    Krausz, Ferenc
    Karsch, Stefan
    Uecker, Reinhard
    Jochmann, Axel
    Hein, Joachim
    Kaluza, Malte Christoph
    OPTICS LETTERS, 2008, 33 (23) : 2770 - 2772
  • [49] Spectroscopy and lasing of cryogenically cooled Yb, Na:CaF2
    A. Pugžlys
    G. Andriukaitis
    D. Sidorov
    A. Irshad
    A. Baltuška
    W. J. Lai
    P. B. Phua
    L. Su
    J. Xu
    H. Li
    R. Li
    S. Ališauskas
    A. Marcinkevičius
    M. E. Fermann
    L. Giniūnas
    R. Danielius
    Applied Physics B, 2009, 97 : 339 - 350
  • [50] EPR and optical properties of CaF2:Yb single crystals
    Leniec, G.
    Kaczmarek, S. M.
    Boulon, G.
    LASERS AND APPLICATIONS, 2005, 5958