Yb:CaF2 grown by liquid phase epitaxy

被引:15
|
作者
Pena, Alexandra [1 ]
Camy, Patrice [1 ]
Benayad, Abdelmjid [1 ]
Doualan, Jean-Louis [1 ]
Maurel, Clement [1 ]
Olivier, Melinda [2 ]
Nazabal, Virginie [2 ]
Moncorge, Richard [1 ]
机构
[1] Univ Caen, Ctr Rech Ions Mat & Photon CIMAP, UMR CEA CNRS ENSICaen, F-14050 Caen, France
[2] Univ Rennes 1, UMR CNRS 6226, Equipe Verres & Ceram, F-35042 Rennes, France
关键词
CaF2; Crystal; Rare earth ions; Liquid phase epitaxy; PLANAR WAVE-GUIDES; YB3+-CAF2 LASER; CAF2; CRYSTAL;
D O I
10.1016/j.optmat.2011.04.025
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Ytterbium doped CaF2 crystalline layers have been grown for the first time from high temperature solutions at controlled atmosphere by using the liquid phase epitaxy technique. Doped layers having thicknesses between a few microns to a hundred of microns have been grown onto non-oriented and (1 1 1) oriented CaF2 substrates. The Yb3+:CaF2 layers show structural properties very close to the undoped substrate without any further thermal treatment. Registration of room temperature emission spectra and fluorescence lifetime measurements performed with epitaxial layers corresponding to different ytterbium concentrations show similar spectroscopic properties as in the bulk crystals. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:1616 / 1620
页数:5
相关论文
共 50 条
  • [31] Yb:CaF2 thin-disk laser
    Wentsch, Katrin Sarah
    Weichelt, Birgit
    Guenster, Stefan
    Druon, Frederic
    Georges, Patrick
    Ahmed, Marwan Abdou
    Graf, Thomas
    OPTICS EXPRESS, 2014, 22 (02): : 1524 - 1532
  • [32] Synthesis and Luminescent Properties of CaF2 and CaF2:Yb3+ Mulberry-like Nanostructures
    Liu Ji-Hong
    Hou Su-Ying
    Xu Wei
    Liu Xian-Chun
    Yu Xiao-Dan
    Liu Bo
    Sun Xiu-Juan
    Xing Yan
    CHEMICAL JOURNAL OF CHINESE UNIVERSITIES-CHINESE, 2011, 32 (08): : 1680 - 1683
  • [33] Initial growth of CaF2 and BaF2/CaF2 on Si(110) during molecular beam epitaxy
    Liu, WK
    Fang, XM
    Yuan, WL
    Santos, MB
    Chatterjee, T
    McCann, PJ
    ORear, EA
    JOURNAL OF CRYSTAL GROWTH, 1996, 167 (1-2) : 111 - 121
  • [34] Pressure dependence of the emission in CaF2:Yb2+
    Mahlik, S.
    Lazarowska, A.
    Grinberg, M.
    Wells, J-P R.
    Reid, M. F.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2015, 27 (30)
  • [35] Photoluminescence properties of ZnO epilayers grown on CaF2(111) by plasma assisted molecular beam epitaxy
    Ko, HJ
    Chen, YF
    Zhu, Z
    Yao, T
    Kobayashi, I
    Uchiki, H
    APPLIED PHYSICS LETTERS, 2000, 76 (14) : 1905 - 1907
  • [36] EU-DOPED CAF2 GROWN ON SI(100) SUBSTRATES BY MOLECULAR-BEAM EPITAXY
    FANG, XM
    CHATTERJEE, T
    MCCANN, PJ
    LIU, WK
    SANTOS, MB
    SHAN, W
    SONG, JJ
    APPLIED PHYSICS LETTERS, 1995, 67 (13) : 1891 - 1893
  • [37] InxGa1-xAs islands grown on CaF2/Si(111) by molecular beam epitaxy
    Takeda, Y
    Moriya, Y
    Sadayoshi, Y
    Nonogaki, Y
    SECOND INTERNATIONAL CONFERENCE ON PROCESSING MATERIALS FOR PROPERTIES, 2000, : 325 - 328
  • [38] Orientation epitaxy of Ge1-xSnx films grown on single crystal CaF2 substrates
    Littlejohn, A. J.
    Lu, T. -M.
    Zhang, L. H.
    Kisslinger, K.
    Wang, G. -C.
    CRYSTENGCOMM, 2016, 18 (15): : 2757 - 2769
  • [39] Optical absorption evidence of quantum confinement in Si/CaF2 multilayers grown by molecular beam epitaxy
    Bassani, F
    Mihalcescu, I
    Vial, JC
    dAvitaya, FA
    APPLIED SURFACE SCIENCE, 1997, 117 : 670 - 676
  • [40] Liquid Phase Epitaxy growth of Tm3+-doped CaF2 thin-films based on LiF solvent
    Brasse, Gurvan
    Loiko, Pavel
    Grygiel, Clara
    Leprince, Philippe
    Benayad, Abdelmjid
    Lemarie, Franck
    Doualan, Jean-Louis
    Braud, Alain
    Camy, Patrice
    JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 803 (442-449) : 442 - 449