Wafer-Scale Graphene Integrated Circuit

被引：717

作者：

Lin, Yu-Ming ^{[1
]}

Valdes-Garcia, Alberto ^{[1
]}

Han, Shu-Jen ^{[1
]}

Farmer, Damon B. ^{[1
]}

Meric, Inanc ^{[1
]}

Sun, Yanning ^{[1
]}

Wu, Yanqing ^{[1
]}

Dimitrakopoulos, Christos ^{[1
]}

Grill, Alfred ^{[1
]}

Avouris, Phaedon ^{[1
]}

Jenkins, Keith A. ^{[1
]}

机构：

[1] IBM Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

SCIENCE | 2011年 / 332卷 / 6035期

关键词：

EPITAXIAL GRAPHENE; HIGH-FREQUENCY; TRANSISTORS; GROWTH;

D O I：

10.1126/science.1204428

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

A wafer-scale graphene circuit was demonstrated in which all circuit components, including graphene field-effect transistor and inductors, were monolithically integrated on a single silicon carbide wafer. The integrated circuit operates as a broadband radio-frequency mixer at frequencies up to 10 gigahertz. These graphene circuits exhibit outstanding thermal stability with little reduction in performance (less than 1 decibel) between 300 and 400 kelvin. These results open up possibilities of achieving practical graphene technology with more complex functionality and performance.

引用

页码：1294 / 1297

页数：4

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