Improved light emission of MoS2 monolayers by constructing AlN/MoS2 core-shell nanowires

被引:9
|
作者
Chen, Fei [1 ,2 ,3 ]
Wang, Ting [1 ,2 ,3 ]
Wang, Lei [1 ]
Ji, Xiaohong [1 ]
Zhang, Qinyuan [1 ,2 ,3 ]
机构
[1] South China Univ Technol, Sch Mat Sci & Engn, Guangzhou 510641, Guangdong, Peoples R China
[2] South China Univ Technol, State Key Lab Luminescent Mat & Devices, Guangzhou 510641, Guangdong, Peoples R China
[3] South China Univ Technol, Inst Opt Commun Mat, Guangzhou 510641, Guangdong, Peoples R China
基金
中国国家自然科学基金;
关键词
LARGE-AREA; LARGE-SCALE; GROWTH; PHOTOLUMINESCENCE; RAMAN;
D O I
10.1039/c7tc03231e
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Hybrid structures composed of layered two-dimensional (2D) transitional metal dichalcogenides have received tremendous attention due to their exceptional tunable optical, electronic, and catalytic properties. In this article, we report the fabrication and novel enhanced photoluminescence (PL) properties of AlN/MoS2 core-shell nanowires. The morphology and composition of the as-prepared AlN/MoS2 core-shell hetero-structures were characterized by X-ray diffraction, field-emission scanning electron microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, and Raman spectroscopy. PL measurements showed that the PL emission of the AlN/MoS2 heterostructures was enhanced with a blue-shift in comparison to that of the MoS2 monolayer grown on a Si/SiO2 substrate. The PL enhancement of the AlN/MoS2 heterostructures was mainly attributed to charge transfer across the interface of the heterostructure. The results presented here provide novel insights into the PL enhancement of MoS2 monolayers.
引用
收藏
页码:10225 / 10230
页数:6
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