Oriented Growth of Gold Nanowires on MoS2

被引:20
|
作者
Kiriya, Daisuke [1 ,2 ,3 ]
Zhou, Yuzhi [2 ,4 ]
Nelson, Christopher [5 ]
Hettick, Mark [1 ,2 ,3 ]
Madhvapathy, Surabhi Rao [1 ,2 ]
Chen, Kevin [1 ,2 ,3 ]
Zhao, Peida [1 ,2 ,3 ]
Tosun, Mahmut [1 ,2 ,3 ]
Minor, Andrew M. [4 ,5 ]
Chrzan, Daryl C. [2 ,4 ]
Javey, Ali [1 ,2 ,3 ]
机构
[1] Univ Calif Berkeley, Elect Engn & Comp Sci, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA
[3] Univ Calif Berkeley, Berkeley Sensor & Actuator Ctr, Berkeley, CA 94720 USA
[4] Univ Calif Berkeley, Mat Sci & Engn, Berkeley, CA 94720 USA
[5] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Mol Foundry, Natl Ctr Electron Microscopy, Berkeley, CA 94720 USA
关键词
field effect transistors (FET); nanowires; transition metal dichalcogenides; DER-WAALS EPITAXY; TRANSITION-METAL DICHALCOGENIDES; GUIDED GROWTH; ZNO NANOWIRES; GRAPHENE; NANOSTRUCTURES; NANOSHEETS; FILMS; AG;
D O I
10.1002/adfm.201502582
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Layered 2D materials serve as a new class of substrates for templated synthesis of various nanomaterials even with highly dissimilar crystal structures; thus overcoming the lattice constraints of conventional epitaxial processes. Here, molybdenum disulfide (MoS2) is used as a prototypical model substrate for oriented growth of in-plane Au nanowires (NWs) despite the nearly 8% lattice mismatch between MoS2 and Au. Au NWs on the MoS2 surface are oriented along three symmetrically equivalent directions within the substrate arising from the strong Au-S binding that templates the oriented growth. The kinetics of the growth process are explored through experiments and modeling. Strong charge transfer is observed between Au NWs and MoS2, resulting in degenerate p-doping of MoS2.
引用
收藏
页码:6257 / 6264
页数:8
相关论文
共 50 条
  • [1] Horizontal growth of MoS2 nanowires by chemical vapour deposition
    Han, Shuming
    Yuan, Cailei
    Luo, Xingfang
    Cao, Yingjie
    Yu, Ting
    Yang, Yong
    Li, Qinliang
    Ye, Shuangli
    [J]. RSC ADVANCES, 2015, 5 (84) : 68283 - 68286
  • [2] Hydrothermal synthesis of MoS2 nanowires
    Li, WJ
    Shi, EW
    Ko, JM
    Chen, ZZ
    Ogino, H
    Fukuda, T
    [J]. JOURNAL OF CRYSTAL GROWTH, 2003, 250 (3-4) : 418 - 422
  • [3] Facile synthesis of branched MoS2 nanowires
    Jia, Yulong
    Ma, Ying
    Lin, Yinhe
    Tang, Jinzhu
    Shi, Wenbing
    [J]. CHEMICAL PHYSICS, 2018, 513 : 209 - 212
  • [4] Direct Epitaxial Growth of InP Nanowires on MoS2 with Strong Nonlinear Optical Response
    Shafi, Abde Mayeen
    Das, Susobhan
    Khayrudinov, Vladislav
    Uddin, Md Gius
    Ding, Er-Xiong
    Ahmed, Faisal
    Sun, Zhipei
    Lipsanen, Harri
    [J]. CHEMISTRY OF MATERIALS, 2022, 34 (20) : 9055 - 9061
  • [5] Controlled growth of MoS2 by atomic layer deposition on patterned gold pads
    Yue, Chenxi
    Wang, Yang
    Liu, Hao
    Chen, Lin
    Zhu, Hao
    Sun, Qingqing
    [J]. JOURNAL OF CRYSTAL GROWTH, 2020, 541
  • [6] Sputtered MoS2 layer as a promoter in the growth of MoS2 nanonanoflakes by TCVD
    Nikpay, Maryam Alsadat
    Mortazavi, Seyedeh Zahra
    Reyhani, Ali
    Elahi, Seyed Mohammad
    [J]. MATERIALS RESEARCH EXPRESS, 2018, 5 (01)
  • [7] Improved light emission of MoS2 monolayers by constructing AlN/MoS2 core-shell nanowires
    Chen, Fei
    Wang, Ting
    Wang, Lei
    Ji, Xiaohong
    Zhang, Qinyuan
    [J]. JOURNAL OF MATERIALS CHEMISTRY C, 2017, 5 (39) : 10225 - 10230
  • [8] One-Step CVD Growth and Interlayer Coupling Characteristics of Twisted MoS2/MoS2/MoS2 Homotrilayers
    Zhang, Teyang
    He, Yuxin
    Lv, Qiuran
    Chen, Fei
    [J]. JOURNAL OF PHYSICAL CHEMISTRY C, 2023, 127 (48): : 23420 - 23427
  • [9] SCANNING TUNNELING MICROSCOPY OBSERVATION OF MOS2 SURFACE AND GOLD CLUSTERS DEPOSITED ON MOS2 SURFACE
    ICHINOKAWA, T
    ICHINOSE, T
    TOHYAMA, M
    ITOH, H
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (01): : 500 - 503
  • [10] Responsivity to solar irradiation and the behavior of carrier transports for MoS2/Si and MoS2/Si nanowires/Si devices
    Wu, Cheng-You
    Lin, Yow-Jon
    [J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2017, 28 (24) : 18331 - 18336