Horizontal growth of MoS2 nanowires by chemical vapour deposition

被引：21

作者：

Han, Shuming ^{[1
]}

Yuan, Cailei ^{[1
]}

Luo, Xingfang ^{[1
]}

Cao, Yingjie ^{[1
]}

Yu, Ting ^{[1
]}

Yang, Yong ^{[1
]}

Li, Qinliang ^{[1
]}

Ye, Shuangli ^{[2
]}

机构：

[1] Jiangxi Normal Univ, Sch Phys Commun & Elect, Jiangxi Key Lab Photoelect & Telecommun, Jiangxi Key Lab Nanomat & Sensors, Nanchang 330022, Jiangxi, Peoples R China

[2] Wuhan Univ, Sch Printing & Packaging, Wuhan 430072, Peoples R China

来源：

RSC ADVANCES | 2015年 / 5卷 / 84期

基金：

中国国家自然科学基金;

关键词：

MONOLAYER MOS2; FEW-LAYER; EVOLUTION;

D O I：

10.1039/c5ra13733k

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We describe a single step route for the synthesis of MoS2 wires using a chemical vapour deposition (CVD) method. By tuning the CVD growth parameters, the horizontally oriented MoS2 nanowires on SiO2/Si substrate can be synthesized successfully. The MoS2 nanowire has height of about 93 nm and width of about 402 nm with multilayer structure. Good local photoluminescence (PL) properties can be observed for these horizontal MoS2 nanowires. The successful fabrication and prominent PL effect of the horizontal MoS2 nanowires provide potential applications for the MoS2-based in planar devices.

引用

页码：68283 / 68286

页数：4

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