High reflectivity distributed Bragg reflectors for 1.55 μm VCSELs using InP/airgap

被引：6
|
作者：
Tsai, JY [1 ]
Lu, TC [1 ]
Wang, SC [1 ]
机构：
[1] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30050, Taiwan
来源：
SOLID-STATE ELECTRONICS | 2003年 / 47卷 / 10期
关键词：
DBR; VCSEL; reflectivity;
D O I：
10.1016/S0038-1101(03)00144-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high reflecting InP/airgap distributed Bragg reflector (DBR) using InGaAs as sacrificial layers is demonstrated. The 3-pair InP/airgap DBR is formed by etching the InGaAs layers of the MOCVD grown InP/InGaAs structure using H2SO4 solution. A rigid and stable InP/airgap DBR with a peak reflectivity of 99.9% at 1.54 mum and a stopband width of about 200 nm is achieved. (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1825 / 1828
页数：4
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