Reflectivity of deep-etched InGaAs-InP waveguide Bragg reflectors

被引：1
|
作者：
Chong, H. M. H. [1 ]
Tan, W. K. [1 ]
Bryce, A. C. [1 ]
机构：
[1] Univ Glasgow, Dept Elect & Elect Engn, Rankine Bldg,Oakfield Ave, Glasgow G12 8LT, Lanark, Scotland
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 5 | 2007年 / 4卷 / 05期
关键词：
D O I：
10.1002/pssc.200674267
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Deep etched Bragg reflector gratings in lnGaAs-InP waveguide structures have been realized. The width of the waveguide was 2 mu m and was dry etched to a depth of more than 1.5 mu m using CH4/H-2-based chemistry. The Bragg reflectors were designed to be first order and to have a large bandwidth - with one to three slots in the waveguide structure. The single slot reflector has a width of 190 nm and the period of other two-slots grating is 420 nm and slot width of similar to 200 nm. (c) 2007 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim.
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页码：1646 / +
页数：2
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