Pulsed laser deposition of ZnO as conductive buffer layer of (001)-LiNbO3 thin films

High-quality c-oriented and oxygen-deficient ZnO thin films were prepared by pulsed laser deposition on quartz fused, (100) silicon and (001) sapphire substrates, respectively. The structural, electrical, and optical properties of the as-grown films were characterized with Various techniques. The Raman measurements revealed additional E-1(LO) mode peak at 579 cm(-1), indicating oxygen deficiency in the films. Significant dependence of the electrical property for the films on substrate temperature was shown. The I-V relation of the films exhibited non-ohmic behavior. Whereas the films deposited above 500 degrees C showed a metal-like property, at a lower substrate temperature semiconducting thin films were achieved. The (001)-oriented LiNbO3/ZnO heterostructure was successfully prepared on quartz fused and (001) sapphire plates.