Pulsed laser deposition of ZnO as conductive buffer layer of (001)-LiNbO3 thin films

被引：8
|
作者：
Liu, JM
Ong, CK
机构：
[1] Natl Univ Singapore, Inst Mat Res & Engn, Singapore 119260, Singapore
[2] Natl Univ Singapore, Fac Sci, Dept Phys, Singapore 119260, Singapore
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1998年 / 67卷 / 04期
关键词：
D O I：
10.1007/s003390050809
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
High-quality c-oriented and oxygen-deficient ZnO thin films were prepared by pulsed laser deposition on quartz fused, (100) silicon and (001) sapphire substrates, respectively. The structural, electrical, and optical properties of the as-grown films were characterized with Various techniques. The Raman measurements revealed additional E-1(LO) mode peak at 579 cm(-1), indicating oxygen deficiency in the films. Significant dependence of the electrical property for the films on substrate temperature was shown. The I-V relation of the films exhibited non-ohmic behavior. Whereas the films deposited above 500 degrees C showed a metal-like property, at a lower substrate temperature semiconducting thin films were achieved. The (001)-oriented LiNbO3/ZnO heterostructure was successfully prepared on quartz fused and (001) sapphire plates.
引用
收藏
页码：493 / 497
页数：5
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