Structural and light-emission modification in chemically-etched porous silicon

被引：0
|
作者：
Navarro-Urrios, A
Perez-Padron, C
Lorenzo, E
Capuj, NE
Gaburro, Z
Oton, CJ
Pavesi, L
机构：
[1] Univ La Laguna, Dept Fis Basica, San Cristobal la Laguna 38071, Spain
[2] Univ Trent, INFM, I-38050 Trento, Italy
[3] Univ Trent, Dipartimento Fis, I-38050 Trento, Italy
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2005年 / 202卷 / 08期
关键词：
D O I：
10.1002/pssa.200461168
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
After electrochemical etching, we have made a study of the effects generated on p(+)-type porous silicon layers when they are left in presence of the electrolyte for different post-etching times. Using an interferometric technique, we have monitored the change of its porosity during the post-etch process due to a chemical dissolution mechanism. These data are complemented with a study of photoluminescence and transmission electron microscopy measurements for different post-etching times. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：1518 / 1523
页数：6
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