UV electroluminescence emissions from high-quality ZnO/ZnMgO multiple quantum well active layer light-emitting diodes

被引：10

作者：

Chen, Shanshan ^{[1
,2
,3
]}

Zhan, Tengrun ^{[1
]}

Pan, Xinhua ^{[3
,4
,5
]}

He, Haiping ^{[3
,4
]}

Huang, Jingyun ^{[3
,4
]}

Lu, Bin ^{[3
,4
]}

Ye, Zhizhen ^{[3
,4
,5
]}

机构：

[1] Guangdong Univ Technol, Sch Mat & Energy, Guangzhou 510006, Peoples R China

[2] Guangdong Prov Key Lab Informat Photon Technol, Guangzhou 510006, Peoples R China

[3] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

[4] Zhejiang Univ, Cyrus Tang Ctr Sensor Mat & Applicat, Sch Mat Sci & Engn, Hangzhou 310027, Peoples R China

[5] Zhejiang Univ, Inst Wenzhou, Wenzhou Key Lab Novel Optoelect & Nano Mat, Wenzhou 325006, Peoples R China

来源：

RSC ADVANCES | 2021年 / 11卷 / 62期

基金：

中国国家自然科学基金;

关键词：

TEMPERATURE-DEPENDENCE; STIMULATED-EMISSION; ZNO; MGXZN1-XO; ZNO/(MG;

D O I：

10.1039/d1ra06685d

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

5-period ZnO/Zn0.9Mg0.1O multiple quantum wells (MQWs) were employed as active layers to fabricate the p-GaN/MQWs/n-ZnO diode by molecular beam epitaxy. It exhibited an efficient UV emission around 370 nm at room temperature. Calculated band structures and carrier distributions showed that electrons were restricted to overflow to the p-type layer, and carriers were confined in the high-quality MQWs well layer.

引用

页码：38949 / 38955

页数：7

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