Intraband polaron dynamics of excited carriers in InAs/InxAl1-xAs quantum dots -: art. no. 075327

被引：2

作者：

Bahir, G ^{[1
]}

Finkman, E

Fossard, F

Julien, FH

Brault, J

Gendry, M

Schacham, SE

机构：

[1] Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel

[2] Technion Israel Inst Technol, Inst Solid State, IL-32000 Haifa, Israel

[3] Univ Paris 11, CNRS, Inst Elect Fondamentale, F-91405 Orsay, France

[4] Ecole Cent Lyon, CNRS, UMR 5512, Lab Elect LEOM, F-69134 Ecully, France

[5] Coll Judea & Samaria, Dept Elect & Elect Engn, IL-44837 Ariel, Israel

来源：

PHYSICAL REVIEW B | 2005年 / 71卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.71.075327

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The lifetime of excited carriers in InAs/InAlAs-on-InP quantum dots is investigated using intraband photoconductive (PC) spectra. A method is presented, based on the analysis of temperature dependence and line shape of PC signals, by which the dynamic properties are derived. Detailed analysis of PC measurements is a powerful method of studying the recombination dynamics. Temperature and energy dependencies are governed by strong electron-phonon interaction. The drop in PC signal with temperature is attributed to increased polaron relaxation due to the increased LA phonon population. Recombination at large detuning from LO phonon energy, as opposed to phonon bottleneck, renders an asymmetric line shape. The peak PC signal is redshifted due to an increased lifetime with detuning.

引用

页数：5

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