Random telegraph noise in the photoluminescence of individual GaxIn1-xAs quantum dots in GaAs -: art. no. 045317

被引：12
|
作者：
Panev, N
Pistol, ME
Zwiller, V
Samuelson, L
Jiang, W
Xu, B
Wang, Z
机构：
[1] Univ Lund, S-22100 Lund, Sweden
[2] Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China
来源：
PHYSICAL REVIEW B | 2001年 / 64卷 / 04期
关键词：
D O I：
10.1103/PhysRevB.64.045317
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have investigated random telegraph noise in the photoluminescence from InGaAs quantum dots in GaAs. Dots switching among two and three levels have been measured. The experiments show that the switching InGaAs dots behave very similarly to switching InP dots in GaInP. but differently from the more commonly investigated colloidal dots. The switching is attributed to defects, and we show that the switching can be used as a monitor of the defect.
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页数：4
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