Intraband polaron dynamics of excited carriers in InAs/InxAl1-xAs quantum dots -: art. no. 075327

被引：2

作者：

Bahir, G ^{[1
]}

Finkman, E

Fossard, F

Julien, FH

Brault, J

Gendry, M

Schacham, SE

机构：

[1] Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel

[2] Technion Israel Inst Technol, Inst Solid State, IL-32000 Haifa, Israel

[3] Univ Paris 11, CNRS, Inst Elect Fondamentale, F-91405 Orsay, France

[4] Ecole Cent Lyon, CNRS, UMR 5512, Lab Elect LEOM, F-69134 Ecully, France

[5] Coll Judea & Samaria, Dept Elect & Elect Engn, IL-44837 Ariel, Israel

来源：

PHYSICAL REVIEW B | 2005年 / 71卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.71.075327

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The lifetime of excited carriers in InAs/InAlAs-on-InP quantum dots is investigated using intraband photoconductive (PC) spectra. A method is presented, based on the analysis of temperature dependence and line shape of PC signals, by which the dynamic properties are derived. Detailed analysis of PC measurements is a powerful method of studying the recombination dynamics. Temperature and energy dependencies are governed by strong electron-phonon interaction. The drop in PC signal with temperature is attributed to increased polaron relaxation due to the increased LA phonon population. Recombination at large detuning from LO phonon energy, as opposed to phonon bottleneck, renders an asymmetric line shape. The peak PC signal is redshifted due to an increased lifetime with detuning.

引用

页数：5

共 50 条

[1] Spectroscopy of the electronic states in InAs quantum dots grown on InxAl1-xAs/InP(001) -: art. no. 155333
Fossard, F
Helman, A
Fishman, G
Julien, FH
Brault, J
Gendry, M
Péronne, E
Alexandrou, A
Schacham, SE
Bahir, G
Finkman, E
PHYSICAL REVIEW B, 2004, 69 (15) : 155333 - 1
[2] Dynamic saturation of an intersublevel transition in self-organized InAs/InxAl1-xAs quantum dots -: art. no. 205329
Péronne, E
Fossard, F
Julien, FH
Brault, J
Gendry, M
Salem, B
Bremond, G
Alexandrou, A
PHYSICAL REVIEW B, 2003, 67 (20):
[3] Defect states in red-emitting InxAl1-xAs quantum dots -: art. no. 085331
Leon, R
Ibáñez, J
Marcinkevicius, S
Siegert, J
Paskova, T
Monemar, B
Chaparro, S
Navarro, C
Johnson, SR
Zhang, YH
PHYSICAL REVIEW B, 2002, 66 (08) : 853311 - 853317
[4] Photoconductivity of InxAl1-xAs parabolic quantum wells in the optical-phonon regime -: art. no. 035337
Bittkau, K
Mecking, N
Gui, YS
Heyn, C
Heitmann, D
Hu, CM
PHYSICAL REVIEW B, 2005, 71 (03)
[5] Spectroscopy and recombination dynamics of InAs/AIAs quantum dots -: art. no. 013541
Dawson, P
Göbel, EO
Pierz, K
JOURNAL OF APPLIED PHYSICS, 2005, 98 (01)
[6] Effects of laser field and electric field on exciton states in InAs/InxAl1-xAs quantum wells
Li, Xue
Wang, Hailong
Hu, Min
Gong, Qian
JOURNAL OF NANOPHOTONICS, 2021, 15 (04)
[7] Quantum size and shape effects on the excited states of InxGa1-xAs quantum dots -: art. no. 245337
Bissiri, M
von Högersthal, GBH
Capizzi, M
Frigeri, P
Franchi, S
PHYSICAL REVIEW B, 2001, 64 (24)
[8] Long polaron lifetime in InAs/GaAs self-assembled quantum dots -: art. no. 177402
Sauvage, S
Boucaud, P
Lobo, RPSM
Bras, F
Fishman, G
Prazeres, R
Glotin, F
Ortega, JM
Gérard, JM
PHYSICAL REVIEW LETTERS, 2002, 88 (17) : 1774021 - 1774024
[9] Population dynamics of resonantly excited carriers in InAs quantum dots
Bonadeo, N.H.
Bloch, Jacqueline
Birkedal, Dan
Shah, Jagdeep
Pfeiffer, L.N.
West, K.W.
Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series, 2000, : 39 - 40
[10] The Electrical and Structural Properties of InyGa1-yAs/InxAl1-xAs/InP Quantum Wells with Different InAs Content
Vasil'evskii, I. S.
Galiev, G. B.
Mokerov, V. G.
Klimov, E. A.
Imamov, R. M.
Subbotin, I. A.
CRYSTALLOGRAPHY REPORTS, 2010, 55 (01) : 6 - 9

← 1 2 3 4 5 →