Dynamic saturation of an intersublevel transition in self-organized InAs/InxAl1-xAs quantum dots -: art. no. 205329

被引：11
|
作者：
Péronne, E
Fossard, F
Julien, FH
Brault, J
Gendry, M
Salem, B
Bremond, G
Alexandrou, A
机构：
[1] Ecole Polytech, Ecole Natl Super Tech, INSERM,U451, CNRS,UMR 7645,Lab Opt & Biosci, F-91128 Palaiseau, France
[2] Ecole Natl Super TEch Avancees, Ecole Polytech, CNRS,UMR 7639, Lab Opt Appl, F-91761 Palaiseau, France
[3] Univ Paris 11, CNRS, UMR 8622, Inst Elect Fondamentale, F-91405 Orsay, France
[4] Ecole Cent Lyon, CNRS, UMR 5512, Lab Electron Optoelectron & Microsyst, F-69134 Ecully, France
[5] Inst Natl Sci Appl, CNRS, UMR 5511, Phys Mat Lab, F-69621 Villeurbanne, France
来源：
PHYSICAL REVIEW B | 2003年 / 67卷 / 20期
关键词：
D O I：
10.1103/PhysRevB.67.205329
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have observed a dynamic saturation of an intersublevel transition in InAs/InxAl1-xAs quantum dots related to the discrete nature of electron states using midinfrared femtosecond spectroscopy. This dynamic saturation is a consequence of the gradual filling of the discrete quantum-dot electron states due to the capture of electrons injected in the barrier. Our interpretation of the differential transmission experiments is confirmed by a comparison with a rate-equation model with the capture and intersublevel relaxation time as fit parameters yielding 10 ps and 1 ps, respectively. We discuss the mechanism responsible for these relaxation times.
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页数：4
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