Structural perfection of epitaxial layers of 3C-SiC grown by vacuum sublimation on 6H-SiC substrates

被引：8
|
作者：
Andreev, AN
Smirnova, NY
Tregubova, AS
Shcheglov, MP
Chelnokov, VE
机构：
[1] A. F. Ioffe Physicotechnical Inst., Russian Academy of Sciences, 194021, St. Petersburg
来源：
SEMICONDUCTORS | 1997年 / 31卷 / 03期
关键词：
D O I：
10.1134/1.1187112
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
This paper discusses how the processing parameters affect the structural perfection of epitaxial layers of 3C-SiC grown on 6H-SiC substrates by vacuum sublimation. It shows that, at constant temperature and using virtually undisoriented substrates, decreasing the growth rate increases the size of the twinning regions in the films and reduces the total defect concentration of the 3C/6H structures. Epitaxial layers of 3C-SiC with a defect density of 10(1)-10(2) cm(-2) and a twinning area of up to 6 mm(2) have been obtained. (C) 1997 American Institute of Physics.
引用
收藏
页码：232 / 236
页数：5
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