High-performance 1.3 μm dilute-nitride edge-emitting lasers

被引：2

作者：

Dumitrescu, M. ^{[1
]}

Larsson, A. ^{[2
]}

Wei, Y. ^{[2
]}

Larkins, E. ^{[3
]}

Uusimaa, P. ^{[4
]}

Schuiz, K. ^{[5
]}

Pessa, M. ^{[1
]}

机构：

[1] Tampere Univ Technol, Optoelect Res Ctr, FIN-33101 Tampere, Finland

[2] Chalmers, Photon Lab, Gothenburg, Sweden

[3] Univ Nottingham, Nottingham, England

[4] Modulight Inc, Tampere, Finland

[5] MergeOptics GmbH, Berlin, Germany

来源：

CAS 2007 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS | 2007年

关键词：

dilute-nitride; low threshold current; high characteristic temperature; extended operating temperature range; 10 Gb/s large-signal modulation;

D O I：

10.1109/SMICND.2007.4519673

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The paper presents record performances achieved by dilute-nitride edge-emitting lasers developed in the EU-FP6 project FAST ACCESS. Some of the dilute-nitride material particularities together with epitaxial growth, post-growth treatment and laser structure issues are discussed. Record threshold current, slope efficiency, characteristic temperature, small- and large-signal modulation are presented, proving that the dilute-nitride GaInAsN lasers are a solution for low-cost un-cooled transmitters targeting the metropolitan and access area networks.

引用

页码：165 / +

页数：2

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