Short-cavity, edge-emitting lasers with high-reflectance, dielectric mirrors

被引:3
|
作者
Fitz, JL [1 ]
Horst, SC [1 ]
Hinkel, DS [1 ]
Turk, H [1 ]
机构
[1] Dept Def, Ft George G Meade, MD 20755 USA
关键词
D O I
10.1063/1.1311322
中图分类号
O59 [应用物理学];
学科分类号
摘要
The fabrication and characterization of short-cavity, edge-emitting lasers operating at 861 nm is reported. These lasers were fabricated with high-reflectance, dielectric mirrors formed by plasma-enhanced, chemical-vapor deposition. Lasers with cavity lengths of 64 and 32 mu m had continuous-wave, room-temperature threshold currents of 4.0 and 2.9 mA, respectively. To determine the reflectance of the deposited dielectric mirrors, a simple relationship was derived that used the change in the laser threshold current density resulting from mirror deposition. [S0003-6951(00)02738-8].
引用
收藏
页码:1756 / 1758
页数:3
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