Multiphonon-relaxation processes in self-organized InAs/GaAs quantum dots

被引：219

作者：

Heitz, R ^{[1
]}

Grundmann, M ^{[1
]}

Ledentsov, NN ^{[1
]}

Eckey, L ^{[1
]}

Veit, M ^{[1
]}

Bimberg, D ^{[1
]}

Ustinov, VM ^{[1
]}

Egorov, AY ^{[1
]}

Zhukov, AE ^{[1
]}

Kopev, PS ^{[1
]}

Alferov, ZI ^{[1
]}

机构：

[1] AF IOFFE PHYS TECH INST,ST PETERSBURG 194021,RUSSIA

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 03期

关键词：

D O I：

10.1063/1.116716

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on optical studies of relaxation processes in self-organized InAs/GaAs quantum dots (QDs). Near resonant photoluminescence excitation spectra reveal a series of sharp Lines. Their energy with respect to the detection energy does not depend on QD size and their energy separations are close to the InAs LO phonon energy of 32.1 meV estimated for strained pyramidal InAs QDs. The shape of the PLE spectra is explained by multiphonon relaxation processes involving LO phonons of the QD as well as of the wetting layer, an interface mode, and low frequency acoustical phonons. (C) 1996 American Institute of Physics.

引用

页码：361 / 363

页数：3

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