Capacitive RF MEMS Switches Using Ultrananocrystalline Diamond Films

被引：0
|
作者：
Lebedeva, A. [1 ]
Alagashev, G. [1 ]
机构：
[1] JSC Bazovye Technol, Moscow, Russia
来源：
PROCEEDINGS OF THE 2014 IEEE NW RUSSIA YOUNG RESEARCHERS IN ELECTRICAL AND ELECTRONIC ENGINEERING CONFERENCE (ELCONRUSNW) | 2014年
关键词：
Microelectromechanical systems (MEMS); RF MEMS switches; ultrananocrystalline diamond (UNCD);
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents the designs, calculated by means of finite element method simulations characteristics and proposes fabrication process of a shunt and a series capacitive RF MEMS switches. Instead of traditional dielectric materials ultrananocrystalline diamond (UNCD) is used as an insulator layer of capacitive switches. These switches demonstrate isolation around 19-20 dB and loss around 0.3-0.4 dB at 10 GHz. The switches are candidates for high power microwave applications with high reliability due to unique charging characteristics of UNCD films.
引用
收藏
页码：54 / 56
页数：3
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