Twist angle dependent electronic properties in 2D graphene/MoS2 vdW heterostructures

被引:6
|
作者
Wang, Jicui [1 ]
Ge, Mei [1 ]
Ma, Rongrong [1 ]
Sun, Yun [1 ]
Cheng, Liyuan [1 ]
Wang, Rui [1 ]
Guo, Miaomiao [1 ]
Zhang, Junfeng [1 ]
机构
[1] Shanxi Normal Univ, Sch Phys & Informat Engn, Taiyuan 030036, Shanxi, Peoples R China
基金
中国国家自然科学基金;
关键词
CORRELATED STATES; MAGIC-ANGLE; BILAYER; MOS2;
D O I
10.1063/5.0077669
中图分类号
O59 [应用物理学];
学科分类号
摘要
Two-dimensional (2D) heterostructures constructed by different 2D materials offer new opportunities for novel nano-devices. Twist angle (theta) between two individual layers in 2D van der Waals (vdW) heterostructures shows great importance in modulating their electronic properties. Here, we performed first-principles calculations to study the thermodynamic stability and electronic properties of graphene/MoS2 (Gr/MoS2) vdW heterostructures. We have built dozens of possible Gr/MoS2 vdW heterostructures under the limitation of the maximum mismatch (delta <= 2.5%) and supercell lattice (>= 20 angstrom). We found the cohesive energy (E-coh) is dependent on the interlayer distance and theta. In addition, a huge difference can be found in both the band offset and interlayer carrier's lifetime of Gr/MoS2 with different theta. These results provide valuable insights into the identification of these twist structures in experiments and the designation of Gr/MoS2 related optoelectronic devices.
引用
收藏
页数:9
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