Twist-angle modulation of exciton absorption in MoS2/graphene heterojunctions

被引:9
|
作者
Zhang, Xiangzhe [1 ]
Yang, Hang [2 ]
Hou, Weiwei [3 ]
Zheng, Xiaoming [2 ]
Zhang, Yi [2 ]
Zhang, Renyan [1 ]
Deng, Chuyun [2 ]
Zhang, Xueao [4 ]
Qin, Shiqiao [1 ]
机构
[1] Natl Univ Def Technol, Coll Adv Interdisciplinary Studies, Changsha 410073, Hunan, Peoples R China
[2] Natl Univ Def Technol, Coll Arts & Sci, Changsha 410073, Hunan, Peoples R China
[3] Nanchang Univ, Nanchang 330031, Jiangxi, Peoples R China
[4] Xiamen Univ, Coll Phys Sci & Technol, Xiamen 361005, Fujian, Peoples R China
关键词
TEMPERATURE-DEPENDENT RAMAN; P-N-JUNCTIONS; THERMAL-CONDUCTIVITY; TUNABLE PHOTOLUMINESCENCE; MONOLAYER MOS2; BILAYER MOS2; GRAPHENE; TRANSITION;
D O I
10.1063/1.5116325
中图分类号
O59 [应用物理学];
学科分类号
摘要
The twist-angle dependence of exciton absorption in a molybdenum disulfide (MoS2)/graphene heterostructure (MGH) is reported. Using photoluminescence (PL) spectroscopy, we found that, as the twist angle increased, the MGH demonstrated an enhancement of PL intensity and a peak position blueshift, indicating that the exciton radiative recombination was positively correlated with the twist angle. In addition, optical reflectance measurements were performed in order to investigate the exciton absorption in the MGH. It was found that the reflectance of MGH samples was twist-angle dependent at wavelengths of 620 and 670 nm, which corresponds to the PL peak positions of MoS2. This was attributed to the change in interlayer charge transfer for different twist angles. Our findings confirm the tunability of the electronic structure in MGHs via the interlayer twist, which enriches our understanding of interlayer coupling and is important for the future development of electronic and optoelectronic devices based on 2D material heterostructures.
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页数:4
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