Fabrication and characterization of transparent ZnO film based resistive switching devices

被引：4

作者：

Li, Hongxia ^{[1
]}

Shen, Dongdong ^{[1
]}

Ke, Weiqing ^{[1
]}

Xi, Junhua ^{[1
]}

Kong, Zhe ^{[1
]}

Ji, Zhenguo ^{[1
]}

机构：

[1] Hangzhou Dianzi Univ, Lab Elect Mat & Devices, Hangzhou 310018, Zhejiang, Peoples R China

来源：

MICRO-NANO TECHNOLOGY XV | 2014年 / 609-610卷

关键词：

transparent film; resistive switching; magnetron sputtering; transmittance; endurance; OXIDE-FILMS; THIN; TRANSISTORS;

D O I：

10.4028/www.scientific.net/KEM.609-610.565

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this paper, ZnO thin films were prepared on ITO conductive glass by direct current magnetron sputtering and the Cu electrodes were evaporated on ZnO/ITO by electric beam evaporation to get transparent Cu/ZnO/ITO resistive random access memory. The crystal structure and surface morphology were investigated by X-ray diffraction and atomic force microscopy, respectively. The transmittance spectra of ZnO/ITO in the visible region were measured by UV-VIS spectroscopy. The resistive switching characteristics of the fabricated devices were investigated by the voltage sweeping method, which showed that the transparent Cu/ZnO/ITO device had good resistive switching characteristics.

引用

下载

页码：565 / 570

页数：6

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