Fabrication and characterization of transparent ZnO film based resistive switching devices

In this paper, ZnO thin films were prepared on ITO conductive glass by direct current magnetron sputtering and the Cu electrodes were evaporated on ZnO/ITO by electric beam evaporation to get transparent Cu/ZnO/ITO resistive random access memory. The crystal structure and surface morphology were investigated by X-ray diffraction and atomic force microscopy, respectively. The transmittance spectra of ZnO/ITO in the visible region were measured by UV-VIS spectroscopy. The resistive switching characteristics of the fabricated devices were investigated by the voltage sweeping method, which showed that the transparent Cu/ZnO/ITO device had good resistive switching characteristics.