Electrical Characterization of Deep Trap Properties in High-k Thin-Film HfO2 Dielectric

被引：0
|
作者：
Yang Lu [1 ]
机构：
[1] N Univ China, Natl Key Lab Elect Measurement Technol, Sch Informat & Commun Engn, Taiyuan 030051, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2010年 / 27卷 / 07期
关键词：
LEVEL TRANSIENT SPECTROSCOPY;
D O I：
10.1088/0256-307X/27/7/077102
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Deep-trap properties of high-dielectric-constant (k) HfO2 thin films are investigated by deep-level transient spectroscopy and capacitance-voltage methods. The hole traps of the HfO2 dielectric deposited on a p-type Si substrate by sputtering are investigated in a metal-oxide-semiconductor structure over a temperature range of 300-500 K. The potential depth, cross section and concentration of hole traps are estimated to be about 2.5 eV, 1.8 x 10(-16) cm(2) and 1.0 x 10(16) cm(-3), respectively.
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页数：3
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