Nanoindentation characterization of aluminum nitride thin films on sapphire substrates

被引：0
|
作者：
Schneider, JA [1 ]
McCarty, KF [1 ]
Heffelfinger, JR [1 ]
Moody, NR [1 ]
机构：
[1] Sandia Natl Labs, Livermore, CA 94551 USA
来源：
INTEGRATED THIN FILMS AND APPLICATIONS | 1998年 / 86卷
关键词：
D O I：
暂无
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The hardness and elastic moduli were calculated for polycrystalline ALN substrates and epitaxial ALN films on sapphire substrates based on nanoindentation tests. Hardness and elastic moduli calculated for the polycrystalline ALN substrates as well as thick (800 nm) epitaxial ALN films on sapphire agree with the published values for bulk AIN samples. For thinner (50 - 110 nm) epitaxial AIN films deposited on sapphire, the measured hardness and elastic moduli initially match the polycrystalline AIN values and increase with indentation distances to values expected for the (0001) oriented sapphire.
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页码：255 / 263
页数：9
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