Nanoindentation characterization of aluminum nitride thin films on sapphire substrates

被引：0
|
作者：
Schneider, JA [1 ]
McCarty, KF [1 ]
Heffelfinger, JR [1 ]
Moody, NR [1 ]
机构：
[1] Sandia Natl Labs, Livermore, CA 94551 USA
来源：
INTEGRATED THIN FILMS AND APPLICATIONS | 1998年 / 86卷
关键词：
D O I：
暂无
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The hardness and elastic moduli were calculated for polycrystalline ALN substrates and epitaxial ALN films on sapphire substrates based on nanoindentation tests. Hardness and elastic moduli calculated for the polycrystalline ALN substrates as well as thick (800 nm) epitaxial ALN films on sapphire agree with the published values for bulk AIN samples. For thinner (50 - 110 nm) epitaxial AIN films deposited on sapphire, the measured hardness and elastic moduli initially match the polycrystalline AIN values and increase with indentation distances to values expected for the (0001) oriented sapphire.
引用
收藏
页码：255 / 263
页数：9
相关论文
共 50 条
  • [41] ALUMINUM NITRIDE THIN-FILMS
    PAULEAU, Y
    HANTZPERGUE, JJ
    REMY, JC
    [J]. BULLETIN DE LA SOCIETE CHIMIQUE DE FRANCE PARTIE I-PHYSICOCHIMIE DES SYSTEMES LIQUIDES ELECTROCHIMIE CATALYSE GENIE CHIMIQUE, 1979, (5-6): : I199 - I214
  • [42] Characterization of aluminum nitride thin films by ion beam analysis techniques
    Rihawy, M. S.
    Abdallah, B.
    Wassouf, A.
    Zetoun, W.
    [J]. APPLIED RADIATION AND ISOTOPES, 2024, 206
  • [43] Characterization of confocal sputtered molybdenum thin films for aluminum nitride growth
    Poudyal, Aseem
    Jackson, Nathan
    [J]. THIN SOLID FILMS, 2020, 693
  • [44] X-RAY DOUBLE-CRYSTAL CHARACTERIZATION OF SINGLE-CRYSTAL EPITAXIAL ALUMINUM NITRIDE THIN-FILMS ON SAPPHIRE, SILICON-CARBIDE AND SILICON SUBSTRATES
    CHAUDHURI, J
    THOKALA, R
    EDGAR, JH
    SYWE, BS
    [J]. JOURNAL OF APPLIED PHYSICS, 1995, 77 (12) : 6263 - 6266
  • [45] Deposition and characterization of amorphous aluminum nitride thin films for a gate insulator
    Oikawa, H.
    Akiyama, R.
    Kanazawa, K.
    Kuroda, S.
    Harayama, I.
    Nagashima, K.
    Sekiba, D.
    Ashizawa, Y.
    Tsukamoto, A.
    Nakagawa, K.
    Ota, N.
    [J]. THIN SOLID FILMS, 2015, 574 : 110 - 114
  • [46] ALUMINUM NITRIDE ON SAPPHIRE
    LAKIN, KM
    LIU, J
    WANG, K
    [J]. IEEE TRANSACTIONS ON SONICS AND ULTRASONICS, 1975, SU22 (03): : 227 - 227
  • [47] The preparation and characterization of preferred (110) orientation aluminum nitride thin films on Si (100) substrates by pulsed laser deposition
    Chen, Hongju
    Jia, Caihong
    Zhang, Xinan
    Zhang, W. F.
    [J]. VACUUM, 2010, 85 (02) : 193 - 197
  • [48] The study of preferred orientation growth of aluminum nitride thin films on ceramic and glass substrates
    Kao, HL
    Shih, PJ
    Lai, CH
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (3A): : 1526 - 1529
  • [49] CHARACTERIZATION OF THIN ALUMINUM FILMS DEPOSITED ONTO VARIOUS METALLIC SUBSTRATES
    SAVAGE, HS
    RIGSBEE, JM
    [J]. JOURNAL OF METALS, 1988, 40 (07): : A84 - A84
  • [50] Hardness, elastic modulus and structure of indium nitride thin films on AlN-nucleated sapphire substrates
    Edgar, JH
    Wei, CH
    Smith, DT
    Kistenmacher, TJ
    Bryden, WA
    [J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1997, 8 (05) : 307 - 312
12345