Thermal Mitigation and Optimization Via Multitier Bond Wire Layout for IGBT Modules Considering Multicellular Electro-Thermal Effect

被引:12
|
作者
Chen, Yu [1 ,2 ]
Wu, Qiang [1 ,2 ]
Li, Chengmin [1 ]
Luo, Haoze [1 ,2 ]
Xia, Yuanye [3 ]
Yin, Qinqin [3 ]
Li, Wuhua [1 ]
He, Xiangning [1 ]
机构
[1] Zhejiang Univ, Coll Elect Engn, Hangzhou 310027, Peoples R China
[2] Zhejiang Univ, ZJU Hangzhou Global Sci & Technol Innovat Ctr, Hangzhou 311200, Peoples R China
[3] Hangzhou Silan Microelect Co Ltd, Dept Power Module, Hangzhou 310012, Peoples R China
基金
中国国家自然科学基金; 美国国家科学基金会;
关键词
Wires; Bonding; Insulated gate bipolar transistors; Metallization; Layout; Stress; Resistance; Electro-thermal coupling; Fourier series; multitier layout; physics-based IGBT model; stitch-bonding wire; three-dimensional (3-D) multicellular equivalent circuit; wire layout optimization; POWER CYCLING PERFORMANCE; TEMPERATURE; PHYSICS; DIODE;
D O I
10.1109/TPEL.2022.3140766
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The stitch wire configuration is widely adopted for large-area IGBT chips. However, an inhomogeneous wire current density introduces uneven self-heating and nonuniform chip heating, which exacerbates the chip thermal stress. In this article, a multicellular electro-thermal model considering the stitch-bonding wires is derived to optimize the wire layout parameters. Furthermore, the current density alleviation of wire bonds is investigated to be the most sensitive and effective method to comprehensively mitigate the thermal nonequilibrium and local overheating. Consequently, an improved multitier layout is proposed to further achieve thermal stress suppression without any additional components and advanced materials. Finally, a triple-tier-bonded IGBT module with optimal design parameters is fabricated to validate the thermal mitigation performance. The prototype experimental results demonstrate that the modeling error is less than 3.0%. The multitier layout decreases the current density by 57.6%, hence, the maximum and average chip temperature are reduced by 21.8% and 12.4%, respectively.
引用
收藏
页码:7299 / 7314
页数:16
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