Temporal characteristics of net excitation rates in inductively coupled plasma in Ar and CF4 by one-dimensional relaxation continuum modeling

被引：4
|
作者：
Hou, K [1 ]
Nakagarni, S [1 ]
Makabe, T [1 ]
机构：
[1] Keio Univ, Fac Sci & Technol, Yokohama, Kanagawa 2238522, Japan
来源：
THIN SOLID FILMS | 2001年 / 386卷 / 02期
关键词：
ICP; RCT-model; CF4; plasma;
D O I：
10.1016/S0040-6090(00)01649-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Plasma structure in an inductively coupled plasma reactor is numerically investigated in electropositive Ar and electronegative CF4 under the lowest sustaining condition. In the case of Ar, the discharge is maintained under the influence of an azimuthal electric field, whilst the CF4 plasma is electrostatically sustained by a radial field under the presence of negative ions F-. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：239 / 242
页数：4
相关论文
共 50 条
  • [1] Diagnostics of an inductively coupled CF4/Ar plasma
    Hioki, K
    Hirata, H
    Matsumura, S
    Petrovic, ZL
    Makabe, T
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2000, 18 (03): : 864 - 872
  • [2] Mode transition in CF4 + Ar inductively coupled plasma
    Liu, Wei
    Gao, Fei
    Zhao, Shu-Xia
    Li, Xue-Chun
    Wang, You-Nian
    PHYSICS OF PLASMAS, 2013, 20 (12)
  • [3] Etching characteristics and mechanisms of the MgO thin films in the CF4/Ar inductively coupled plasma
    Efremov, A.
    Woo, J. C.
    Kim, G. H.
    Kim, C. I.
    MICROELECTRONIC ENGINEERING, 2007, 84 (04) : 638 - 645
  • [4] Characteristics of CFx radicals and plasma parameters in an inductively coupled CF4 plasma
    Kim, JH
    Chung, KH
    Yoo, YS
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2005, 47 (02) : 249 - 255
  • [5] Measurements of the electron energy distribution function in an Ar/CF4 inductively coupled plasma
    Bowden, MD
    Tabata, R
    Suanpoot, P
    Uchino, K
    Muraoka, K
    Noguchi, M
    JOURNAL OF APPLIED PHYSICS, 2001, 90 (05) : 2158 - 2161
  • [6] Etch characteristics of HfO2 thin films by using CF4/Ar inductively coupled plasma
    Kang, Pil-Seung
    Woo, Jong-Chang
    Joo, Young-Hee
    Kim, Chang-Il
    VACUUM, 2013, 93 : 50 - 55
  • [7] Ar addition effect on mechanism of fluorocarbon ion formation in CF4/Ar inductively coupled plasma
    Choi, CJ
    Kwon, OS
    Seol, YS
    Kim, YW
    Choi, IH
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (02): : 811 - 819
  • [8] The Dry Etching of TiN Thin Films Using Inductively Coupled CF4/Ar Plasma
    Woo, Jong-Chang
    Choi, Chang-Auck
    Joo, Young-Hee
    Kim, Han-Soo
    Kim, Chang-Il
    TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS, 2013, 14 (02) : 67 - 70
  • [9] Etching characteristics of Bi4-xLaxTi3O12 (BLT) in inductively coupled CF4/Ar plasma
    Kim, DP
    Kim, CI
    MICROELECTRONIC ENGINEERING, 2003, 66 (1-4) : 912 - 917
  • [10] INVESTIGATION OF PLASMA PARAMETERS IN DUAL ANTENNA CF4/Ar/O2 INDUCTIVELY COUPLED PLASMA
    Park, Sangho
    Han, Duksun
    Moon, Se Youn
    2016 43RD IEEE INTERNATIONAL CONFERENCE ON PLASMA SCIENCE (ICOPS), 2016,
12345