The transition from 2D to 3D nanoclusters of silicon carbide on silicon

被引：9

作者：

Trushin, YV ^{[1
]}

Safonov, KL

Ambacher, O

Pezoldt, J

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] Tech Univ Ilmenau, Zentrum Mikro & Nanotechnol, D-98684 Ilmenau, Germany

来源：

TECHNICAL PHYSICS LETTERS | 2003年 / 29卷 / 08期

关键词：

D O I：

10.1134/1.1606782

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have evaluated the critical average distance between the nanoclusters of silicon carbide grown by molecular beam epitaxy on silicon and estimated the time of the transition from two- to three-dimensional growth. (C) 2003 MAIK "Nauka / Interperiodica".

引用

页码：663 / 665

页数：3

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