The transition from 2D to 3D nanoclusters of silicon carbide on silicon

被引：9
|
作者：
Trushin, YV [1 ]
Safonov, KL
Ambacher, O
Pezoldt, J
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[2] Tech Univ Ilmenau, Zentrum Mikro & Nanotechnol, D-98684 Ilmenau, Germany
来源：
TECHNICAL PHYSICS LETTERS | 2003年 / 29卷 / 08期
关键词：
D O I：
10.1134/1.1606782
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have evaluated the critical average distance between the nanoclusters of silicon carbide grown by molecular beam epitaxy on silicon and estimated the time of the transition from two- to three-dimensional growth. (C) 2003 MAIK "Nauka / Interperiodica".
引用
收藏
页码：663 / 665
页数：3
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