Interfacial electrical properties of POxNyInz/n-InP

被引：1
|
作者：
Hbib, H
Quan, DT
Bonnaud, O
Menkassi, A
机构：
[1] Grp. Microlectron.,/Visulaisation, URA CNRS 1648, Campus de Beaulieu
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1996年 / 155卷 / 02期
关键词：
D O I：
10.1002/pssa.2211550231
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
引用
收藏
页码：K5 / K7
页数：3
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