A physical analytical model of multilayer on-chip inductors

被引：24
|
作者：
Tong, KY [1 ]
Tsui, C [1 ]
机构：
[1] Hong Kong Polytech Univ, Dept Elect & Informat Engn, Kowloon, Hong Kong, Peoples R China
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2005年 / 53卷 / 04期
关键词：
eddy currents; inductor model; on-chip inductors; RF integrated circuits (ICs);
D O I：
10.1109/TMTT.2005.845721
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An analytical model of multilayer on-chip inductors for CMOS integrated circuits based on physical principles has been developed. It provides accurate prediction of the self-resonant frequency, and eddy-current losses in the metal and Si substrate, as compared with experimental and numerical simulation results. The model includes improvements in the evaluation of eddy currents in metals caused by the proximity effect, and the equivalent capacitances in multilayer inductors. The Q factors deduced from the model agree well with experimental and numerical simulation results for multilayer inductors over a wide range of frequencies and widths of metal segments.
引用
收藏
页码：1143 / 1149
页数：7
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