Formation of Al-doped ZnO films by de magnetron reactive sputtering

被引：87
|
作者：
Chen, M [1 ]
Pei, ZL
Sun, C
Wen, LS
Wang, X
机构：
[1] Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, Shanghai 200050, Peoples R China
[2] Chinese Acad Sci, Inst Met Res, Shenyang 110015, Peoples R China
来源：
MATERIALS LETTERS | 2001年 / 48卷 / 3-4期
基金：
中国博士后科学基金;
关键词：
Al-doped; ZnO; XPS; Al-enrichment;
D O I：
10.1016/S0167-577X(00)00302-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Highly preferred (002) orientation transparent conductive Al-doped ZnO (ZAO) films were successfully prepared by de magnetron reactive sputtering from a Zn target mixed with Al of 2.0 wt.%. The film has a resistivity of 4.80 X 10(-4) n cm and a visible transmittance of as high as 90%. XPS analysis indicates Al-enrichment on the film surface. The asymmetry of Al 2p(3/2) XPS peak is resolved into two components: one centering at 72.14 eV attributed to metallic Al and the other having a binding energy of 74.17 eV due to oxidized Al. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：194 / 198
页数：5
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