Al-doped ZnO films deposited by reactive magnetron sputtering in mid-frequency mode with dual cathodes

被引：36
|
作者：
Kon, M
Song, PK
Shigesato, Y
Frach, P
Mizukami, A
Suzuki, K
机构：
[1] Aoyama Gakuin Univ, Coll Sci & Engn, Setagaya Ku, Tokyo 1578572, Japan
[2] Fraunhofer Inst Elektronenstrahl & Plasmatechn, D-01277 Dresden, Germany
[3] Nissin Seiki Co Ltd, Ibaraki 3113123, Japan
[4] SurfTech Transnatl Co Ltd, Minato Ku, Tokyo 1050004, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2002年 / 41卷 / 2A期
关键词：
transparent conductive film; ZnO; AZO; dual cathodes; DMS; plasma emission; reactive sputtering; transition region;
D O I：
10.1143/JJAP.41.814
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Aluminum-doped zinc oxide (AZO) films were deposited on heated (300degreesC) glass substrates by reactive mid-frequency (mf, 50 kHz) magnetron sputtering using dual magnetron cathodes with aluminum-zinc alloy targets. In order to keep the very high deposition rate, reactive gas control using plasma emission was carried out to stabilize the discharge in the "transition region" of the reactive sputtering system. The highest deposition rate for the transparent conductive AZO films by this dual magnetron sputtering (DMS) system was 290 nm/min, which was higher than that for the conventional reactive sputtering system by one order of magnitude. The lowest resistivity of the AZO film was 3.9 x 10(-4) Omega cm. The structure and electrical properties of the films could be controlled systematically by the reactive gas control system in the transition region.
引用
收藏
页码：814 / 819
页数：6
相关论文
共 50 条
  • [1] Al-doped ZnO films deposited by reactive magnetron sputtering in mid-frequency mode with dual cathodes
    Kon, Masato
    Song, Pung Keun
    Shigesato, Yuzo
    Frach, Peter
    Mizukami, Akio
    Suzuki, Koichi
    [J]. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2002, 41 (2 A): : 814 - 819
  • [2] Impedance control of reactive sputtering process in mid-frequency mode with dual cathodes to deposit Al-doped ZnO films
    Kon, M
    Song, PK
    Shigesato, Y
    Frach, P
    Ohno, S
    Suzuki, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (01): : 263 - 269
  • [3] Studies on ZnO:Al thin films deposited by in-line reactive mid-frequency magnetron sputtering
    Hong, RJ
    Jiang, X
    Szyszka, B
    Sittinger, V
    Pflug, A
    [J]. APPLIED SURFACE SCIENCE, 2003, 207 (1-4) : 341 - 350
  • [4] Comparison of the ZnO:Al films deposited in static and dynamic modes by reactive mid-frequency magnetron sputtering
    Hong, RJ
    Jiang, X
    Szyszka, B
    Sittinger, V
    Xu, SH
    Werner, W
    Heide, G
    [J]. JOURNAL OF CRYSTAL GROWTH, 2003, 253 (1-4) : 117 - 128
  • [5] Growth of al-doped ZnO films by mid frequency DC magnetron sputtering
    Lin, Qinggeng
    Gao, Xiaoyong
    Liu, Yufen
    Lu, Jingxiao
    [J]. Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology, 2008, 28 (06): : 566 - 569
  • [6] Influence of negative ion resputtering on Al-doped ZnO thin films prepared by mid-frequency magnetron sputtering
    Cai, Yongan
    Liu, Wei
    He, Qing
    Zhang, Yi
    Yu, Tao
    Sun, Yun
    [J]. APPLIED SURFACE SCIENCE, 2010, 256 (06) : 1694 - 1697
  • [7] Photocatalytic properties of TiO2 films deposited by reactive sputtering in mid-frequency mode with dual cathodes
    Ohno, S
    Sato, D
    Kon, M
    Sato, Y
    Yoshikawa, M
    Frach, P
    Shigesato, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (12): : 8234 - 8241
  • [8] ZnO Al Films Prepared by Reactive Mid-frequency Magnetron Sputtering with Rotating Cathode
    Hong, Ruijiang
    Xu, Shuhua
    [J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2010, 26 (10) : 872 - 877
  • [9] ZnO:Al Films Prepared by Reactive Mid-frequency Magnetron Sputtering with Rotating Cathode
    Ruijiang Hong 1) and Shuhua Xu 2) 1) School of Physics and Engineering
    [J]. Journal of Materials Science & Technology, 2010, 26 (10) : 872 - 877
  • [10] Preparation of ZnO:Al films by mid-frequency impulse magnetron sputtering
    Key Lab. of Instrumentation Science and Dynamic Measurement, Department of Electronic Engineering, North China University of Science and Technology, Taiyuan 030051, China
    不详
    不详
    不详
    [J]. Guangdianzi Jiguang, 2006, 12 (1427-1431):
12345