Fabrication of quantum point contacts and quantum dots by imprint lithography

被引：9
|
作者：
Martini, I
Kamp, M
Fischer, F
Worschech, L
Koeth, J
Forchel, A
机构：
[1] Univ Wurzburg, D-97074 Wurzburg, Germany
[2] Nanoplus Nanosyst & Technol GmbH, D-97074 Wurzburg, Germany
来源：
MICROELECTRONIC ENGINEERING | 2001年 / 57-8卷
关键词：
nanoimprint; mix-and-match fabrication; quantum point contact; quantum dot;
D O I：
10.1016/S0167-9317(01)00446-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrate the integration of imprint lithography into nanoelectronic device fabrication. The gates of quantum point contacts and quantum dots were patterned by imprint lithography. A Si mold with the gate pattern is embossed into a PMMA film located on top of the GaAs/AlGaAs heterostructure. The Schottky gates are fabricated by metal evaporation and lift-off. The gate tip separation ranges from 120 to 600 mn for the quantum point contacts and from 100 to 1000 mn for the quantum dots. Transport studies performed at T = 4.2 K show conductance quantization with varying gate voltages for the split-gate quantum point contacts and the upper and lower split-gates of the quantum dot. (C) 2001 Elsevier Science BY All rights reserved.
引用
收藏
页码：397 / 403
页数：7
相关论文
共 50 条
  • [1] Fabrication of quantum point contacts by imprint lithography and transport studies
    Martini, I
    Kuhn, S
    Kamp, M
    Worschech, L
    Forchel, A
    Eisert, D
    Koeth, J
    Sijbesma, R
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (06): : 3561 - 3563
  • [2] Aluminum quantum dots fabrication by nano-imprint lithography
    Hirai, Y
    Yoshida, S
    Okuno, H
    Fujiwara, M
    Tanaka, Y
    MICROPROCESSES AND NANOTECHNOLOGY 2000, DIGEST OF PAPERS, 2000, : 292 - 293
  • [3] Fabrication of colloidal quantum dot microcavities by imprint lithography
    Martiradonna, L.
    De Giorgi, M.
    Troisi, L.
    Carbone, L.
    Gigli, G.
    Cingolani, R.
    De Vittorio, M.
    ICTON 2006: 8TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS, VOL 2, PROCEEDINGS: ESPC, NAON, 2006, : 64 - +
  • [4] Quantum point contacts fabricated by nanoimprint lithography
    Martini, I
    Eisert, D
    Kamp, M
    Worschech, L
    Forchel, A
    Koeth, J
    APPLIED PHYSICS LETTERS, 2000, 77 (14) : 2237 - 2239
  • [5] Step and flash imprint lithography for quantum dots based room temperature single electron transistor fabrication
    Cheam, Daw Don
    Karre, P. Santosh Kumar
    Palard, Marylene
    Bergstrom, Paul L.
    MICROELECTRONIC ENGINEERING, 2009, 86 (4-6) : 646 - 649
  • [6] CONDUCTANCE DISTRIBUTION IN QUANTUM DOTS WITH POINT CONTACTS
    PRIGODIN, VN
    EFETOV, KB
    IIDA, S
    PHYSICAL REVIEW B, 1995, 51 (23): : 17223 - 17226
  • [7] QUANTUM POINT CONTACTS PREPARED BY OPTICAL CONTACT LITHOGRAPHY
    GRAMBOW, P
    NIEDER, J
    HEITMANN, D
    VONKLITZING, K
    PLOOG, K
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (12) : 1178 - 1180
  • [8] CAPACITANCE AND CONDUCTANCE OF DOTS CONNECTED BY QUANTUM POINT CONTACTS
    FLENSBERG, K
    PHYSICA B, 1994, 203 (3-4): : 432 - 439
  • [9] Chaotic behavior induced by point contacts in quantum dots
    Verges, JA
    Cuevas, E
    Ortuno, M
    Louis, E
    PHYSICAL REVIEW B, 1998, 58 (16) : R10143 - R10146
  • [10] Electron transport driven by moving quantum dots in distant quantum point contacts
    He, J. H.
    Gao, J.
    EPL, 2011, 96 (06)
12345