Quantum point contacts fabricated by nanoimprint lithography

被引：14
|
作者：
Martini, I [1 ]
Eisert, D
Kamp, M
Worschech, L
Forchel, A
Koeth, J
机构：
[1] Univ Wurzburg, D-97074 Wurzburg, Germany
[2] Nanoplus Nanosyst & Technol GmbH, D-97074 Wurzburg, Germany
来源：
APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 14期
关键词：
D O I：
10.1063/1.1315343
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The potential of integrating nanoimprint lithography into electronic device fabrication is demonstrated by means of a quantum point contact (QPC). A Si-mold with a split-gate pattern is embossed into a thin polymer film located on top of a modulation-doped GaAs/AlGaAs heterostructure. The split-gates are fabricated by metal evaporation and lift-off. The gate tip separation ranges from 180 nm to 400 nm. Transport studies performed at a temperature of 4.2 K show conductance quantization with varying gate voltages. (C) 2000 American Institute of Physics. [S0003-6951(00)04940-8].
引用
收藏
页码：2237 / 2239
页数：3
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