Fabrication of quantum point contacts and quantum dots by imprint lithography

被引：9
|
作者：
Martini, I
Kamp, M
Fischer, F
Worschech, L
Koeth, J
Forchel, A
机构：
[1] Univ Wurzburg, D-97074 Wurzburg, Germany
[2] Nanoplus Nanosyst & Technol GmbH, D-97074 Wurzburg, Germany
来源：
MICROELECTRONIC ENGINEERING | 2001年 / 57-8卷
关键词：
nanoimprint; mix-and-match fabrication; quantum point contact; quantum dot;
D O I：
10.1016/S0167-9317(01)00446-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrate the integration of imprint lithography into nanoelectronic device fabrication. The gates of quantum point contacts and quantum dots were patterned by imprint lithography. A Si mold with the gate pattern is embossed into a PMMA film located on top of the GaAs/AlGaAs heterostructure. The Schottky gates are fabricated by metal evaporation and lift-off. The gate tip separation ranges from 120 to 600 mn for the quantum point contacts and from 100 to 1000 mn for the quantum dots. Transport studies performed at T = 4.2 K show conductance quantization with varying gate voltages for the split-gate quantum point contacts and the upper and lower split-gates of the quantum dot. (C) 2001 Elsevier Science BY All rights reserved.
引用
收藏
页码：397 / 403
页数：7
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