Effects of SOI film thickness on high-performance microprocessor by 0.13μm partially-depleted SOICMOS technology

被引：0

作者：

Yang, J ^{[1
]}

Min, B ^{[1
]}

Yasuhito, S ^{[1
]}

Kang, L ^{[1
]}

Walker, P ^{[1
]}

Mendicino, M ^{[1
]}

Yeap, G ^{[1
]}

Foisy, M ^{[1
]}

Cox, K ^{[1
]}

Cartwright, J ^{[1
]}

Venkatesan, S ^{[1
]}

机构：

[1] Motorola Inc, Semicond Prod Sector, Dan Noble Ctr, Austin, TX 78721 USA

来源：

2003 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS | 2003年

关键词：

D O I：

10.1109/SOI.2003.1242890

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes how SOI film thickness affects performance and power consumption of a Partially-Depleted (PD) SOI microprocessor. System level speed/power performance will be compared directly between chips fabricated with different SOI film thickness. The performance improvement is also supported by device level and macro circuit level comparison. Yield issues associated with thinner SOI will also be addressed.

引用

页码：41 / 42

页数：2

共 33 条

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